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KEC MPS8550S-D-RTK/P

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KEC MPS8550S-D-RTK/P

MOQ : 9000

Current - Collector(Ic) : 1.5A

Description : Bipolar (BJT) Transistor PNP 25V 1.5A 200MHz 350mW Surface Mount SOT-23

Stock : 480000

Current - Collector Cutoff : 100nA

Packaging Details : SOT-23

Pd - Power Dissipation : 350mW

Emitter-Base Voltage(Vebo) : 6V

Brand Name : MPS8550S-D-RTK/P

Transition frequency(fT) : 200MHz

Collector - Emitter Voltage VCEO : 25V

Delivery Time : 5-8工作日

Model Number : MPS8550S-D-RTK/P

type : PNP

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Product Overview

MPS8550S is an epitaxial planar PNP transistor designed for high current applications. It is complementary to the MPS8050S.

Brand

KELC

Type Name

MPS8550S

Package

SOT-23

Marking

hrg Rank Lot No.

Characteristic	Symbol	Rating (Ta=25C)	Test Condition	Min	Typ	Max	Unit
Collector-Base Voltage	VCBO	-30					V
Collector-Emitter Voltage	VCEO	-30					V
Emitter-Base Voltage	VEBO	-5					V
Collector Current	IC	-1.5					A
Collector Power Dissipation	PC	625	*				mW
Junction Temperature	TJ	150					C
Storage Temperature Range	Tstg	-55 to 150					C
Collector Cut-off Current	ICBO	-10	VEB=-35V, IC=0				nA
Emitter Cut-off Current	IEBO	-10	VEB=-6V, IC=0				nA
Collector-Base Breakdown Voltage	V(BR)CBO	-30	IC=-100A, IE=0				V
Collector-Emitter Breakdown Voltage	V(BR)CEO	-30	IE=-2mA, IC=0				V
DC Current Gain	hFE(1)		VCE=-1V, IC=-5mA	85		160
DC Current Gain	hFE(2)		VCE=-1V, IC=-100mA	120		200
DC Current Gain	hFE(3)		VCE=-1V, IC=-800mA	160		300
Collector-Emitter Saturation Voltage	VCE(sat)		IC=-800mA, IB=-80mA		-0.3	-0.75	V
Base-Emitter Saturation Voltage	VBE(sat)		IC=-800mA, IB=-80mA		-0.95	-1.2	V
Base-Emitter Voltage	VBE		VCE=-1V, IC=-10mA		-0.8	-1.0	V
Transition Frequency	fT		VCE=-10V, IC=-50mA		100		MHz
Collector Output Capacitance	Cob		VCE=-10V, f=1MHz, IE=0			50	pF

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