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GOFORD 4435

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GOFORD 4435

Operating Temperature - : -55℃~+150℃

Number : 1 P-Channel

Brand Name : 4435

MOQ : 1

Current - Continuous Drain(Id) : 10A

Gate Charge(Qg) : 30nC@10V

Pd - Power Dissipation : 3.1W

RDS(on) : 16mΩ@10V;20mΩ@4.5V

Drain to Source Voltage : 30V

Output Capacitance(Coss) : 350pF

Delivery Time : 6-13工作日

Description : P-Channel 30V 10A 3.1W Surface Mount SOP-8

Input Capacitance(Ciss) : 1.6nF

Packaging Details : SOP-8

Reverse Transfer Capacitance (Crss@Vds) : 300pF

Gate Threshold Voltage (Vgs(th)) : 1.6V@250uA

Model Number : 4435

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Product Overview

The GOFORD 4435 is a semiconductor device utilizing advanced trench technology. It offers excellent Rds(on) and low gate charge, enabling operation with gate voltages as low as 4.5V. Its high power and current handling capability make it suitable for applications such as battery switches, load switches, and power management.

BrandGOFORD

Product Model4435

Package TypeSOP-8

CertificationsRoHS Compliant

Parameter	Symbol	Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	BVdss	Vgs=0V, Id=-250pA	-30	-	-	V
Zero Gate Voltage Drain Current	Idss	Vds=-30V, Vgs=0V	-	-	1	pA
Gate-Body Leakage Current	Igs	Vds=120V, Vgs=0V	-	-	+100	nA
Gate Threshold Voltage	Vgs(th)	Vds=Vgs, Id=-250pA	-1	-1.6	-2.5	V
Drain-Source On-State Resistance	Rds(on)	Vgs=-10V, Id=-10A	-	16	20	m
Drain-Source On-State Resistance	Rds(on)	Vgs=-4.5V, Id=-5A	-	20	33	m
Forward Transconductance	gfs	Vds=-15V, Id=-10A	10	-	-	S
Input Capacitance	Ciss	Vds=15V, Vgs=0V, f=1.0MHz	-	1600	-	pF
Output Capacitance	Coss	Vds=15V, Vgs=0V, f=1.0MHz	-	350	-	pF
Reverse Transfer Capacitance	Crss	Vds=15V, Vgs=0V, f=1.0MHz	-	300	-	pF
Turn-on Delay Time	td(on)	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	10	-	nS
Turn-on Rise Time	tr	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	15	-	nS
Turn-Off Delay Time	td(off)	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	110	-	nS
Turn-Off Fall Time	tf	Vds=-15V, Id=-1A, Vgs=10V, Rgen=6	-	70	-	nS
Total Gate Charge	Qg	Vds=-15V, Id=-10A	-	30	-	nC
Gate-Source Charge	Qgs	Vds=-15V, Id=-10A, Vgs=-10V	-	55	-	nC
Gate-Drain Charge	Qgd	Vds=-15V, Id=-10A, Vgs=-10V	-	8	-	nC
Diode Forward Voltage	Vsd	Vgs=0V, Is=-5A	-	-	-1.2	V

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