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Packaging Details : SOT-23
RDS(on) : 28mΩ@1.8V
Reverse Transfer Capacitance (Crss@Vds) : 70pF
Output Capacitance(Coss) : 78.4pF
Gate Charge(Qg) : 6.4nC@4.5V
Delivery Time : 6-13 working days
Operating Temperature - : -55℃~+150℃
Description : N-Channel 20V 4.5A 1.4W Surface Mount SOT-23
Gate Threshold Voltage (Vgs(th)) : 1V@250uA
Type : N-Channel
Pd - Power Dissipation : 1.4W
Current - Continuous Drain(Id) : 4.5A
MOQ : 1
Input Capacitance(Ciss) : 336pF
Model Number : 2300
Drain to Source Voltage : 20V
Number : 1 N-channel
Brand Name : 2300
Function: N-Channel MOSFET
Usage: Load Switch, DC/DC Converter
Advantages: Trench Technology, Low RDS(ON), Low Gate Charge, ESD Protected
HIGH DIODE SEMICONDUCTOR
SOT-23
RoHS Compliant
Trench Technology Power MOSFET
| Parameter | Symbol | Test Condition | Min | Type | Max | Unit |
|---|---|---|---|---|---|---|
| Drain - Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 20V, VGS = 0V | 1 | A | ||
| Gate - Body Leakage Current | IGSS | VGS = 12V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 0.4 | 0.7 | 1 | V |
| Drain-source On-resistance | RDS(on) | VGS = 4.5V, ID = 3A | 18 | 32 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 2.5V, ID = 2A | 22 | 40 | m | |
| Drain-source On-resistance | RDS(on) | VGS = 1.8V, ID =2A | 28 | 62 | m | |
| Input Capacitance | Ciss | VDS = 10V, f = 1MHz | 336 | pF | ||
| Output Capacitance | Coss | VDS = 10V, f = 1MHz | 78.4 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 10V, f = 1MHz | 70 | pF | ||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID=6A | 6.4 | 8.2 | nC | |
| Gate-source Charge | Qgs | VDS = 10V, VGS = 4.5V, ID=6A | 1.8 | 2.3 | nC | |
| Gate-drain Charge | Qg d | VDS = 10V, VGS = 4.5V, ID=6A | 1.3 | 1.9 | nC | |
| Turn-on Delay Time | td(on) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 10.5 | 21 | ns | |
| Turn-on Rise Time | tr | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.5 | 9 | ns | |
| Turn-off Delay Time | td(off) | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 27.5 | 55 | ns | |
| Turn-off Fall Time | tf | VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=6 | 4.3 | 8.6 | ns | |
| Diode Forward Voltage | VSD | VGS = 0V, IS = 1.7A | 1.2 | V |
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain - Source Voltage | VDS | 20 | V |
| Gate - Source Voltage | VGS | 12 | V |
| Continuous Drain Current | ID | 4.5 | A |
| Pulsed Drain Current | IDM | 18 | A |
| Power Dissipation | PD | 1.4 | W |
| Thermal Resistance Junction to Ambient | RJA | 89 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | TSTG | -55~ +150 |
| Symbol | Min (mm) | Max (mm) | Min (in) | Max (in) |
|---|---|---|---|---|
| A | 0.900 | 1.150 | 0.035 | 0.045 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 0.900 | 1.050 | 0.035 | 0.041 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.080 | 0.150 | 0.003 | 0.006 |
| D | 2.800 | 3.000 | 0.110 | 0.118 |
| E | 1.150 | 1.500 | 0.045 | 0.059 |
| E1 | 2.250 | 2.650 | 0.089 | 0.104 |
| e | 1.800 | 2.000 | 0.071 | 0.079 |
| e1 | 0.950 TYP | 0.037 TYP | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 |
| L1 | ||||
| 0 | 8 | 0 | 8 |
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High Diode 2300 Images |