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High Diode 2300

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High Diode 2300

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Packaging Details : SOT-23

RDS(on) : 28mΩ@1.8V

Reverse Transfer Capacitance (Crss@Vds) : 70pF

Output Capacitance(Coss) : 78.4pF

Gate Charge(Qg) : 6.4nC@4.5V

Delivery Time : 6-13 working days

Operating Temperature - : -55℃~+150℃

Description : N-Channel 20V 4.5A 1.4W Surface Mount SOT-23

Gate Threshold Voltage (Vgs(th)) : 1V@250uA

Type : N-Channel

Pd - Power Dissipation : 1.4W

Current - Continuous Drain(Id) : 4.5A

MOQ : 1

Input Capacitance(Ciss) : 336pF

Model Number : 2300

Drain to Source Voltage : 20V

Number : 1 N-channel

Brand Name : 2300

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Product Overview

Function: N-Channel MOSFET

Usage: Load Switch, DC/DC Converter

Advantages: Trench Technology, Low RDS(ON), Low Gate Charge, ESD Protected

Brand

HIGH DIODE SEMICONDUCTOR

Package Type

SOT-23

Certifications

RoHS Compliant

Technology

Trench Technology Power MOSFET

Technical Specifications

ParameterSymbolTest ConditionMinTypeMaxUnit
Drain - Source Breakdown VoltageV(BR)DSSVGS = 0V, ID = 250A20V
Zero Gate Voltage Drain CurrentIDSSVDS = 20V, VGS = 0V1A
Gate - Body Leakage CurrentIGSSVGS = 12V, VDS = 0V100nA
Gate Threshold VoltageVGS(th)VDS = VGS, ID = 250A0.40.71V
Drain-source On-resistanceRDS(on)VGS = 4.5V, ID = 3A1832m
Drain-source On-resistanceRDS(on)VGS = 2.5V, ID = 2A2240m
Drain-source On-resistanceRDS(on)VGS = 1.8V, ID =2A2862m
Input CapacitanceCissVDS = 10V, f = 1MHz336pF
Output CapacitanceCossVDS = 10V, f = 1MHz78.4pF
Reverse Transfer CapacitanceCrssVDS = 10V, f = 1MHz70pF
Total Gate ChargeQgVDS = 10V, VGS = 4.5V, ID=6A6.48.2nC
Gate-source ChargeQgsVDS = 10V, VGS = 4.5V, ID=6A1.82.3nC
Gate-drain ChargeQg dVDS = 10V, VGS = 4.5V, ID=6A1.31.9nC
Turn-on Delay Timetd(on)VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=610.521ns
Turn-on Rise TimetrVDS = 10V, VGS = 4.5V, ID = 1A, RGEN=64.59ns
Turn-off Delay Timetd(off)VDS = 10V, VGS = 4.5V, ID = 1A, RGEN=627.555ns
Turn-off Fall TimetfVDS = 10V, VGS = 4.5V, ID = 1A, RGEN=64.38.6ns
Diode Forward VoltageVSDVGS = 0V, IS = 1.7A1.2V

Absolute Maximum Ratings

ParameterSymbolValueUnit
Drain - Source VoltageVDS20V
Gate - Source VoltageVGS12V
Continuous Drain CurrentID4.5A
Pulsed Drain CurrentIDM18A
Power DissipationPD1.4W
Thermal Resistance Junction to AmbientRJA89/W
Junction TemperatureTJ150
Storage TemperatureTSTG-55~ +150

Package Outline Dimensions (SOT-23)

SymbolMin (mm)Max (mm)Min (in)Max (in)
A0.9001.1500.0350.045
A10.0000.1000.0000.004
A20.9001.0500.0350.041
b0.3000.5000.0120.020
c0.0800.1500.0030.006
D2.8003.0000.1100.118
E1.1501.5000.0450.059
E12.2502.6500.0890.104
e1.8002.0000.0710.079
e10.950 TYP0.037 TYP
L0.3000.5000.0120.020
L1
0808

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